Development of Manufacturing Technology of Photo-Dielectric Sensitive Element of Ultraviolet Range on the Basis of Thin Films of Zinc Oxide

Авторы: Shashin D.E., Sushentsov N.I. Опубликовано: 16.12.2019
Опубликовано в выпуске: #6(129)/2019  
DOI: 10.18698/0236-3933-2019-6-99-109

Раздел: Приборостроение, метрология и информационно-измерительные приборы и системы | Рубрика: Проектирование и технология приборостроения и радиоэлектронной аппаратуры  
Ключевые слова: photodielectric effect, ultraviolet radiation, thin films, zinc oxide, magnetron sputtering

The development of ultraviolet radiation is essential for solving scientific and practical problems. A large number of application areas related to the registration of ultraviolet radiation requires the expansion of the list of materials used and the creation of new technologies for the production of ultraviolet radiation detectors. Zink oxide thin films are widely used in recording and measuring devices for the ultraviolet range, due to its wide bandgap (3.37 eV) and unique optical characteristics. The purpose of the work is to create a technology for the manufacture of photodielectric sensing element of the ultraviolet range based on zink oxide thin films. To achieve the goal, the following tasks were set and solved: to obtain an experimental sample of the photodielectric-sensing element of the ultraviolet range, investigate the photoelectric effect in zinc oxide films obtained by reactive magnetron sputtering, determine the optimal voltage and frequency of the measuring signal for the operation of the photodielectric sensing element of the ultraviolet range. The article describes the equipment and the sequence of technological operations for the production of thin films of zinc oxide and conducting electrodes by magnetron sputtering. The optimal voltage and frequency of the measuring signal for the sensing element are investigated. The spectral sensitivity of the element in the ultraviolet range was determined


[1] Chen C., Xu H., Zhang F., et al. Nanostructured morphology control and optical properties of ZnO thin film deposited from chemical solution. Mater. Res. Bull., 2014, vol. 52, pp. 183--188. DOI: 10.1016/j.materresbull.2014.01.014

[2] Lansiart L., Millon E., Perriere J., et al. Structural properties of ZnO films grown by picosecond pulsed-laser deposition. Appl. Surf. Sc., 2012, vol. 258, no. 23, pp. 9112--9115. DOI: 10.1016/j.apsusc.2011.08.047

[3] Duygulu N.E., Kodolbas A., Ekerim A. Influence of RF power on structural properties of ZnO thin films. J. Cryst. Growth, 2013, vol. 381, pp. 51--56. DOI: 0.1016/j.jcrysgro.2013.07.008

[4] Yao B., Chan Y., Wang N. Formation of ZnO nanostructures by a simple way of thermal evaporation. Appl. Phys. Lett., 2002, vol. 81, no. 4, pp. 757--760. DOI: 10.1063/1.1495878

[5] Yang L., Yang J., Wang D., et al. Photoluminescence and Raman analysis of ZnO nanowires deposited on Si (100) via vapor-liquid-solid process. Physica E: Low Dimens. Syst. Nanostruct., 2008, vol. 40, no. 4, pp. 920--923. DOI: 10.1016/j.physe.2007.11.025

[6] Huang S., Chen Z., Shen X., et al. Raman scattering of single tetrapod-like ZnO nanostructure synthesized by catalyst-free rapid evaporation. Solid State Commun., 2008, vol. 145, no. 7-8, pp. 418--422. DOI: 10.1016/j.ssc.2007.11.014

[7] Red’kin A.N., Ryzhova M.V., Yakimov E.E, et al. Aligned arrays of zinc oxide nanorods on silicon substrates. Semiconductors, 2013, vol. 47, no. 2, pp. 252--258. DOI: 10.1134/S1063782613020176

[8] Djurisic A.B., Leung Y.H. Optical properties of ZnO nanostructures. Small, 2006, vol. 2, no. 8-9, pp. 944--961. DOI: 10.1002/smll.200600134

[9] Krivchenko V.A., Lopaev D.V., Pashchenko P.V. UV detectors based on nanocrystalline ZnO films. Prikladnaya fizika [Applied Physics], 2008, no. 8, pp. 107--111 (in Russ.).

[10] Zima V.N., Korzh I.A., Nikolaenko K.V., et al. [Thin-film ultraviolet sensor]. REIS--2011. Omsk, Omskiy NII priborostroeniya Publ., 2011, pp. 441--448 (in Russ.).

[11] Avanesyan V.T., Bordovskii G.A., Potachov S.A. Dielectric characterization of the lone pair oxide structure. J. Non Cryst. Solids., 2002, vol. 305, no. 1-3, pp. 44--50. DOI: 10.1016/S0022-3093(02)01090-6

[12] Belyanin A.F., Krivchenko V.A., Lopaev D.V., et al. Nano-structured ZnO films for microelectronics and optical devices. TKEA, 2006, no. 6, pp. 48--55 (in Russ.).

[13] Ozgur U., Alivo Ya.I., Liu C., et al. A comprehensive review of ZnO materials and devices. J. Appl. Phys., 2005, vol. 98, no. 4, pp. 1--103. DOI: 10.1063/1.1992666

[14] Alsultany H., Hassan Z., Ahmed N.M. A high-sensitivity, fast-response, rapid-recovery UV photodetector fabricated based on catalyst-free growth of ZnO nanowire networks on glass substrate. Opt. Mater., 2016, vol. 60, pp. 30--37. DOI: 10.1016/j.optmat.2016.07.004