Parameters of Resistive Structures on Polycrystalline Silicon
| Authors: Glushko A.A., Shakhnov V.A. | Published: 30.08.2013 |
| Published in issue: #1(82)/2011 | |
| DOI: | |
| Category: Design and technology | |
| Keywords: simulation, mobility, silicon polycrystals, temperature dependence, resistor | |
The mechanism of conduction polycrystalline silicon is considered. Parameters of the model of mobility through boundary of crystallites are determined. The simulation of the resistor based on polycrystalline silicon is conducted in the range of negative temperatures, and limits of resistance change within the specified temperature range are determined.