|
Main Editorial Ryzhii V.I.
Ryzhii V.I.

Corresponding member of the Russian Academy of Sciences, Prof.

Tohoku University

Tohoku, Japan

Ryzhii V.I.

V.I. Ryzhii graduated from the Moscow Institute of Physics and Technology in 1967. Dr. Sc. (Phys.-Math.), Professor, Chief Researcher Tohoku University. Corresponding Member of the Russian Academy of Sciences. Fellow of Institute of Electronics and Electrical Engineers (IEEE), Fellow of the American Physical Society (APS). Author of more than 400 publications in the field of theory and mathematical simulation of physical processes in electronic, optoelectronic, and terahertz devices based on semiconductor micro- and nanostructures. Contributed to the theory of absolute negative conductance and quantum state in two-dimensional electronic systems, to physics of infrared and terahertz photo-detectors, laser and plasma devices based on quantum wells and quantum dotsts, as well as on graphene structures. Developer of principles of mathematical simulation of semiconductor micro- and nanodevices.

SPIN-code: 5790-5018

Scopus Author ID: 55663999800